Spatial ALD is emerging as an essential technology for deposition of thin films for advanced memory and logic selective processing found in gate-around FETs, high aspect ratio contacts, DRAM capacitors, advanced NVM technologies, and even self-aligned double patterning (SADP) lithography. Spatial ALD is expected to deposit high-conformal thin films at high throughput using low-temperature, low-vacuum or no-vacuum process chambers. However, there are challenges associated with spatial ALD, and gas mixing, optimizing platform rotation speed, optimizing gas purge flow, varying concentrations of reaction gases, and safety considerations are some of the issues process engineers are working to optimize. This seminar will introduce Atonarp's Aston in-situ metrology solution and discuss its key differentiators, which have been adopted by several spatial ALD OEMs to address these challenges.

‍What you will learn

Benefits and Challenges of Spatial ALD
Why are speed, sensitivity, and robustness important in spatial ALD metrology solutions?
Aston Impact and Plasma metrology solutions and the differentiation that led to their use as critical in-situ process control measurements in spatial ALD applications.
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